Multi-metal contact structure in microelectronic component

ABSTRACT

A first conductive material having a first hardness is disposed within a recess or opening of a microelectronic component, in a first preselected pattern, and forms a first portion of an interconnect structure. A second conductive material having a second hardness different from the first hardness is disposed within the recess or opening in a second preselected pattern and forms a second portion of the interconnect structure.

PRIORITY CLAIM AND CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.15/919,894, filed Mar. 13, 2018, and also claims the benefit under 35U.S.C. § 119(e)(1) of U.S. Provisional Application No. 62/472,877, filedMar. 17, 2017, entitled “MULTI-METAL CONTACT STRUCTURE,” both of whichare hereby incorporated by reference in their entirety.

FIELD

The following description relates to processing of integrated circuits(“ICs”). More particularly, the following description relates to devicesand techniques for processing substrates.

BACKGROUND

Semiconductor chips are fabricated on suitable flat substrate wafers,such as GaAs, diamond coated substrates, silicon carbide, siliconwafers, etc. After making the active devices, a series of steps areperformed to connect the various devices with highly conducting wiringstructures, so they can have communication with each other to performlogic or memory storage operations. These wiring structures orinterconnect structures are essentially a skeletal network of conductingmaterials, typically metals, in a matrix of dielectric materials. Inhigh performance devices and to improve device density and yield, it maybe desirable to minimize topographic features within the interconnectlayers for any given device and across the entire substrate. One commonmethod of forming these high performance interconnect layers is thedamascene process.

Multiple types of damascene structures are known, however single anddual damascene processes are the most common. In single damascene, eachmetal or via layer is fabricated in a series of operations, while indual damascene, a metal layer and a via layer may be fabricated in asimilar operation. Of these two, the dual damascene technique may bepreferred because of lower cost and higher device performance.

In the single damascene process, a suitable substrate with or withoutdevices is coated with a suitable resist layer. The resist layer isimaged to define desirable patterns by lithographic methods on thesubstrate. Cavities are etched on the patterned substrates typically byreactive ion etching (RIE) methods. The etched cavities are cleaned toremove RIE residues. The patterned substrate is then coated with asuitable barrier/seed layer prior to overfilling the cavities with asuitable metal, typically copper, by electro-deposition from asuperfilling plating bath chemistry.

The damascene process may be repeated to form multiple layers ofinterconnects, and the top surface of the substrate is polished. As aresult of the discontinuity in the properties (difference in mechanicalproperties, polishing rates, etc.) of the metal and insulator, and theirrespective interactions with the polishing pad, polishing slurry, andother process parameters, the polishing produces erosion in high metalpattern density features and dishing in large metal structures. Thehigher the metal pattern density, the higher the erosion in thedielectric layer. Similarly, the larger the size of the metal cavity,the worse the gravity of the dishing defect. These deleterious defectscan cause a variety of defects in subsequent layers, reducing deviceyield.

Similar results are observed in cross section topographic profiles ofpolished through silicon via (TSV) structures. The centers of the viasare typically lower than the surface of the insulators.

Among the consequences of dishing on the interconnect structures is poorflatness of the conductor and much higher temperatures typically neededto bond devices to the dished substrate or for wafer to wafer bondingusing so called hybrid bonding, i.e. DBI® techniques. With very largepads, dishing can be too deep for the opposing device's surfaces to mateintimately and to form a grain contact or inter-diffusion bond, as themetal may not expand enough at annealing temperatures to form thediffusion bond. Also, the poor flatness on the conductor surface oftenproduces defective bonds, when the surface is bonded or attached toother devices or substrates.

Attempts to reduce the impact of these defects have included theincorporation of dummy dielectric features within large copperstructures in dual damascene features for chip interconnects. This caneffectively reduce the dishing in copper pads, since the metal width issignificantly reduced as compared to previous large pads without dummydielectric features within them. This approach has been helpful, but ithas also increased mask design complexity and the associated loss offreedom of structure placement on the modified pads.

BRIEF DESCRIPTION OF THE DRAWINGS

The detailed description is set forth with reference to the accompanyingfigures. In the figures, the left-most digit(s) of a reference numberidentifies the figure in which the reference number first appears. Theuse of the same reference numbers in different figures indicates similaror identical items.

For this discussion, the devices and systems illustrated in the figuresare shown as having a multiplicity of components. Variousimplementations of devices and/or systems, as described herein, mayinclude fewer components and remain within the scope of the disclosure.Alternately, other implementations of devices and/or systems may includeadditional components, or various combinations of the describedcomponents, and remain within the scope of the disclosure.

FIG. 1(A) shows a profile view and a plan view of dishing of a largecontact pad as a result of example substrate processing. FIG. 1(B) showsa profile view and a plan view of a polished plated substrate with addedconforming dielectric layer(s) used to reduce dishing of the contactarea.

FIG. 2(A) shows a profile view and a plan view of dishing of a largecontact pad as a result of example substrate processing. FIG. 2(B) showsa profile view and a plan view of a substrate with an embedded metallicgrid used to reduce dishing of a contact area. FIG. 2(C) shows a profileview of dishing of substrate with an embedded metallic grid.

FIG. 3(A) shows a profile view and a plan view of the substrate withembedded metallic grid of FIG. 2(B). FIG. 3(B) shows a profile view anda plan view of a substrate with an example multi-metal contact area,according to an embodiment.

FIG. 4(A) shows a plan view of a substrate with an example multi-metalcontact area according to a first embodiment. FIG. 4(B) shows a planview of a substrate with an example multi-metal contact area accordingto a second embodiment. FIG. 4(C) shows a plan view of a substrate withan example multi-metal contact area according to a third embodiment.

FIG. 5 illustrates an example process of forming and bonding twosubstrates with multi-metal contact areas, according to an embodiment.

FIG. 6 illustrates another example process of forming and bonding twosubstrates with multi-metal contact areas, according to an embodiment.

FIG. 7 illustrates another examples process of forming and bonding twosubstrates with multi-metal contact areas, according to an embodiment.

SUMMARY

Various embodiments of techniques and devices for improving theconductivity of contact pads and associated devices, are disclosed. Theembodiments comprise techniques to remedy the erosion or “dishing” ofcontact pads on substrates resulting from chemical mechanicalpolishing/planarizing (CMP) of the substrates, as well as improving theconductivity of the remedied contact pads on the substrates.

A microelectronic component can include a substrate including a recessor opening extending from a first surface of the substrate, at least aportion of the first surface of the substrate having a planarizedtopography. A first conductive material, having a first hardness, may bedisposed within the recess or opening in a first preselected pattern andmay form a first portion of an interconnect structure of themicroelectronic component, the first portion of the interconnectstructure extending normal to a plane of the substrate. Additionally, asecond conductive material, having a second hardness different from thefirst hardness, may be disposed within the recess or opening in a secondpreselected pattern and may form a second portion of the interconnectstructure of the microelectronic component, the second portion of theinterconnect structure extending normal to the plane of the substrate.

In a first embodiment, a layer of the first conductive material may bedisposed over an exposed surface of the second portion of theinterconnect structure. Additionally, a layer of a third conductivematerial, different from the first and second conductive materials, maybe disposed over an exposed surface of the first and second portions ofthe interconnect structure. Further, the first conductive material maycomprise copper or a copper alloy and the second conductive material maycomprise nickel or a nickel alloy. Still yet, the first conductivematerial or the second conductive material may comprise at least one ofcopper, nickel, tin, indium, gallium, or gold, or an alloy of at leastone of copper, nickel, tin, indium, gallium, or gold.

In a second embodiment, a conductive layer may be disposed at apreselected depth below the first surface of the substrate and extendingparallel to the plane of the substrate, the first portion of theinterconnect structure and the second portion of the interconnectstructure formed on a first surface of the conductive layer. Further,one or more additional conductive materials having one or moreadditional hardness characteristics different from the first hardnessand the second hardness, may be disposed within the recess or opening inone or more preselected patterns and forming one or more additionalportions of the interconnect structure of the microelectronic component.Still yet, the first portion of the interconnect structure and thesecond portion of the interconnect structure may be adjacent verticallayers, extending normal to the plane of the substrate.

In a third embodiment, the second hardness of the second conductivematerial may be greater than the first hardness of the first conductivematerial.

In a fourth embodiment, an exposed surface of the second portion of theinterconnect structure may protrude above an exposed surface of thefirst portion of the interconnect structure and may be level with orrecessed below the first surface of the substrate.

In a fifth embodiment, a coefficient of thermal expansion (CTE) of thefirst conductive material may be greater than a CTE of the secondconductive material.

In a sixth embodiment, the first preselected pattern may comprise a gridpattern and the second preselected pattern may comprise a fill betweenportions of the grid pattern. Additionally, the first preselectedpattern and the second preselected patterns may comprise alternatingconcentric rings. Further, the second preselected pattern may comprise afirst elliptical or polygonal shape and the first preselected patternmay comprise a plurality of smaller elliptical or polygonal shapes, theplurality of smaller elliptical or polygonal shapes arranged within aperimeter of the first elliptical or polygonal shape.

A microelectronic component can include a substrate including a recessor opening extending from a first surface of the substrate, at least aportion of the first surface of the substrate having a planarizedtopography. A first material, having a first hardness, may be disposedwithin the recess or opening in a grid pattern and may form a firstportion of an interconnect structure of the microelectronic component,the first portion of the interconnect structure extending normal to aplane of the substrate. Additionally, a second material, having a secondhardness different from the first hardness, may be disposed within therecess or opening in a pattern comprising a fill between portions of thegrid pattern and may form a second portion of the interconnect structureof the microelectronic component, the second portion of the interconnectstructure extending normal to the plane of the substrate, wherein one ofthe first and second materials may comprise a conductive material andthe other of the first and second materials comprises a non-conductivematerial or dielectric.

A microelectronic component can include a substrate including a recessor opening extending from a first surface of the substrate, at least aportion of the first surface of the substrate having a planarizedtopography. A first material, having a first hardness, may be disposedwithin the recess or opening in a first pattern and may form a firstportion of an interconnect structure of the microelectronic component,the first portion of the interconnect structure extending normal to aplane of the substrate. Additionally, a second material, having a secondhardness different from the first hardness, may be disposed within therecess or opening in a second pattern and may form a second portion ofthe interconnect structure of the microelectronic component, the secondportion of the interconnect structure extending normal to the plane ofthe substrate, wherein one of the first and second materials maycomprise a conductive material and the other of the first and secondmaterials may comprise a non-conductive material or dielectric andwherein the first and second patterns may comprise alternatingconcentric rings.

A method of forming a microelectronic component can include forming arecessed portion in a first surface of a substrate, the recessed portionextending a preselected depth below the first surface of the substrate.A first conductive material may be disposed having a first hardnesswithin the recessed portion in a first preselected pattern to form afirst portion of an interconnect structure of the microelectroniccomponent, the first portion of the interconnect structure extendingnormal to a plane of the substrate. Additionally, a second conductivematerial may be disposed having a second hardness different than thefirst hardness within the recessed portion in a second preselectedpattern to form a second portion of the interconnect structure of themicroelectronic component, the second portion of the interconnectstructure extending normal to the plane of the substrate. Further, thefirst surface of the substrate may be planarized for intimate surfacebonding, the planarizing forming an exposed surface of the first portionof the interconnect structure recessed below the first surface of thesubstrate and may form an exposed surface of the second portion of theinterconnect structure protruding above the exposed surface of the firstportion of the interconnect structure and level with or recessed belowthe first surface of the substrate.

In a seventh embodiment, a layer of the first conductive material may bedeposited over the exposed surface of the second portion of theinterconnect structure. Additionally, the first interconnect structureand the second interconnect structure comprise one of an electricalcontact pad or a via in pad. Further, the first portion of theinterconnect structure or the second portion of the interconnectstructure may be formed of a reflowable metal material. The firstportion of the interconnect structure and the second portion of theinterconnect structure may additionally be formed as adjacent verticallayers, extending normal to the plane of the substrate.

In an eighth embodiment, the microelectronic component may be a firstmicroelectronic component and the interconnect structure may be a firstinterconnect structure, and a surface of a second microelectroniccomponent may be contacted to the first surface of the firstmicroelectronic component to bond the second microelectronic componentto the first microelectronic component without an adhesive layer, and asecond interconnect structure of the second microelectronic componentmay be bonded to the first interconnect structure by a metal to metaldiffusion bond without an intervening reflowable material.

In a ninth embodiment, a conductive layer may be formed within therecessed portion of the substrate at the preselected depth below thefirst surface of the substrate and extending parallel to the plane ofthe substrate, and the first portion of the interconnect structure andthe second portion of the interconnect structure may be formed on afirst surface of the conductive layer.

A microelectronic component can include a substrate including a recessor opening extending from a first surface of the substrate, at least aportion of the first surface of the substrate having a planarizedtopography. A first conductive material, having a first melting point,may be disposed within the recess or opening in a first preselectedpattern and may form a first portion of an interconnect structure of themicroelectronic component, the first portion of the interconnectstructure extending normal to a plane of the substrate. Additionally, asecond conductive material, having a second melting point greater thanthe first melting point, may be disposed within the recess or opening ina second preselected pattern and may form a second portion of theinterconnect structure of the microelectronic component, the secondportion of the interconnect structure extending normal to the plane ofthe substrate and may have an exposed surface of the second portion ofthe interconnect structure protruding above the exposed surface of thefirst portion of the interconnect structure and level with or recessedbelow the first surface of the substrate.

In a tenth embodiment, one or more additional conductive materialshaving one or more additional and different melting points may bedisposed within the recess or opening in one or more preselectedpatterns and forming one or more additional portions of the interconnectstructure of the microelectronic component.

A microelectronic component can include a substrate including a recessor opening extending from a first surface of the substrate, at least aportion of the first surface of the substrate having a planarizedtopography. A first conductive material, having a first melting point,may be disposed within the recess or opening at a conducting layer ofthe substrate and may form a first portion of an interconnect structureof the microelectronic component, the first portion of the interconnectstructure extending normal to a plane of the substrate and having athickness greater than one micrometer. Additionally, a second conductivematerial having a second melting point different than the first meltingpoint, may be disposed within the recess or opening at the conductinglayer of the substrate and may form a second portion of the interconnectstructure of the microelectronic component, the second portion of theinterconnect structure extending normal to the plane of the substrateand having a thickness greater than one micrometer.

A microelectronic component can include a substrate including a recessor opening extending from a first surface of the substrate, at least aportion of the first surface of the substrate having a planarizedtopography. A first conductive material, having a first hardness, may bedisposed within the recess or opening in a first preselected pattern andmay form a first portion of an interconnect structure of themicroelectronic component, the first portion of the interconnectstructure extending normal to a plane of the substrate. Additionally, asecond non-conductive material, having a second hardness different fromthe first hardness, may be disposed within the recessed portion in asecond preselected pattern and may form a second portion of theinterconnect structure of the microelectronic component, the secondportion of the interconnect structure extending normal to the plane ofthe substrate. Further, the second preselected pattern may comprise afirst elliptical or polygonal shape and the first preselected patternmay comprise a plurality of smaller elliptical or polygonal shapes, theplurality of smaller elliptical or polygonal shapes arranged within aperimeter of the first elliptical or polygonal shape.

The disclosed processes can be implemented in any suitable manufacturingor processing apparatus or system, along with any hardware, software,firmware, or a combination thereof, without departing from the scope ofthe subject matter described herein. Implementations are explained inmore detail below using a plurality of examples. Although variousimplementations and examples are discussed here and below, furtherimplementations and examples may be possible by combining the featuresand elements of individual implementations and examples.

DETAILED DESCRIPTION

Overview

Various embodiments of techniques and devices for improving theconductivity of contact pads and associated devices, are disclosed. Theembodiments comprise techniques to remedy the erosion or “dishing” ofcontact pads on substrates resulting from chemical mechanicalpolishing/planarizing (CMP) of the substrates, as well as improving theconductivity of the remedied contact pads on the substrates.

FIG. 1(A) shows a profile view and a plan view of dishing of a largecontact pad as a result of example substrate processing. As shown, across-section of a large metallic (copper, for example) contact pad 102is disposed within a substrate 104 (which may comprise a dielectric orother insulating or semiconductor layer, for example), as part of amicroelectronic device, for instance. The contact pad 102 showssignificant dishing as a result of processing the substrate 104, such asCMP polishing, for example. In one example, a contact pad 102 could beas large as 10 to 60 micro meters wide (diameter if a circular pad orside if a square pad; other shapes may also be possible). The substrate104 may include wafers, such as GaAs, diamond coated substrates, siliconcarbide, silicon oxide, Silicon Nitride, silicon wafers, LithiumNiobate, Lithium Tantalate, flat panels, glasses, ceramics, circuitboards, packages, an interposer, structures with or without an embeddeddevice or devices, etc. For clarity, the substrate 104 comprises asurface of interest processed for intimate contact with another surface.

As shown in FIG. 1(A), as a result of chemical mechanical planarization(CMP), or the like, the contact pad 102 (which may be metallic) may begenerally dished or recessed with respect to the substrate 104, due tothe mechanical, chemical, or physical properties of the conductive metalof the contact pad 102 being different from those of the surroundingsubstrate 104 (which may be silicon oxide, diamond, silicon nitride orsilicon oxynitide or alumina for example). In some cases, the dishingeffect can be greater when the polishing compound includes metals and/orvarious chemicals that can remove the metal of the contact pad 102faster than the substrate 104. Additionally, in one embodiment, the sizeof the recess or dishing effect may be directly proportional to thepolishing pressure (i.e. the higher the pressure, the greater recess)and/or the lateral dimensions of the contact pad. In some cases, thedepth of the recess in the contact pad 102 may range between 10-150 nmor up to 1-2 microns, or more. This is well beyond the range that may begenerally desirable for direct bond interconnects (DBI) and otherbonding methods that use intimate surface contact, especially where theinterconnect features are thinner than 1 micron.

As shown in FIG. 1(B), one technique to attempt to resolve problemsgenerated by the excessive dishing shown at FIG. 1(A) includes formingan added dielectric layer 106 (which may comprise one or more dielectric(or other material) layers) over the substrate 104 and some or all ofthe contact pad 102. When the dielectric layer 106 is planarized (usingknown methods, for example), the resulting exposed portion of thecontact pad 102 can have a lateral dimension P₂ that is smaller than alateral dimension P₁ of the contact pad 102 beneath.

The smaller lateral dimension P₂ of the exposed portion of the contactpad 102 can result in a more acceptable recess profile for directbonding applications. For example, the smaller exposed contact pad 102may result in reduced dishing during the CMP process, and the planarizedsurface of the added dielectric 106 comprises the new bonding surface.

This approach can be helpful to reduce dishing, but it can also increasemask design complexity and the associated loss of freedom of structureplacement on the modified contact pads. Further, the exposed area of themodified contact pad (indicated by P₂) is a fraction of the area of theoriginal pad (indicated by P₁), greatly reducing the electrical contactarea and increasing the resistance of the contact area of the pad 102.The smaller contact pad 102 reduces the electrical current carryingcapacity of the contact pad 102, which is not always desirable.

FIG. 2(A) shows a profile view and a plan view dishing of a largecontact pad as a result of example substrate processing. As shown, alarge contact pad 102 (which may be metallic) is disposed within asubstrate 104 (which may be a dielectric), as described with referenceto FIG. 1(A). As described above, the contact pad 102 shows significantdishing as a result of processing the substrate 104, such as CMPpolishing, for example.

FIG. 2(B) illustrates another remedy sometimes used to minimize dishingof the contact area. As shown at FIG. 2(B), to avoid severe dishing, themetal-to-oxide density can be reduced at the contact area using ametallic grid 202. For example, the metallic grid 202 can have a similararea dimension as the large contact pad 102, and can be used in place ofthe contact pad 102. The metallic grid 202 can comprise a copper mesh,for example, the perimeter of which approximates the perimeter of thecontact pad 102. The metallic grid 202 can be continuous with or coupledto other interconnect structures, wiring features, vias, or the like, toprovide electrical connectivity for a microelectronic device, or thelike.

The metallic grid 202 may be formed, for example, by etching trenches inthe substrate 104, and filling the trenches (using deposition, adamascene process, or the like) with copper or other conductivematerials. Since the traces of the metallic grid 202 can have a minimalwidth (e.g., 1-10 um, for example), the dishing of the contact area canbe greatly reduced (down to about 2-10 nm, for instance). This processmay result in a more even bonding surface, which is advantageous forbonding using intimate surface contact techniques.

However, the metallic grid 202 can significantly reduce the electricalcontact area and increase the resistance of the contact area. Forexample, while the overall area within the contact pad may beapproximately 25 um×25 um (625 um²), the effective area of the gridavailable for contact may be much smaller, on the order of 184 um² (8×[1um×25 um]−16 um²) for the trench thickness of 1 um and the effectivecontact area when 2 such pads are bonded together using a DBI method maybe even smaller, on the order of 18 um² or lower, due to the offsetbetween the contact pads. The reduction in electrical contact, theeffective increase in contact resistance and resulting loss ofperformance of the contact area can make this a less than idealsolution.

Also, the substrate 104 (which may be a silicon oxide region, adielectric material, or the like) between adjacent metallic traceswithin the grid 202 can experience erosion. The erosion of the substrate104 may even be more severe than the dishing of the metallic grid 202 insome instances. For example, the erosion of the substrate 104 may rangebetween 10 to 25 nm or even greater, while the dishing in the metallicgrid 202 may still be within specification. In such instances, the largeerosion of the substrate 104 now controls the higher bonding temperatureused for the metallic grid 202 to expand to contact the opposing matingdevice. Further, excessive substrate 104 erosion can produce voids inportions of the structures, where the opposing surfaces cannot mateintimately. FIG. 2(C) shows a profile view of dishing of substrate 104with an embedded metallic grid 202. As shown at FIG. 2(C), afterpolishing the substrate 104 and the metallic grid 202, dishing 204 anddielectric erosion 206 may result.

Example Embodiments

FIG. 3 shows a comparison of the metallic grid 202 (shown at FIG. 3(A)in cross-section and plan views) with a novel multi-metal contactstructure 302, according to one embodiment. In various embodiments, themulti-metal structure 302 (shown at FIG. 3(B), also in cross-section andplan views) can be used in place of the metallic grid 202 or the contactpad 102 to reduce dishing of the contact area, without the issue oferosion of the substrate 104 between the traces of the grid 202. Forinstance, as shown in FIG. 3(B), the multi-metal contact structure 302can be comprised of two or more conductive materials, such as metals forexample. A first conductive material can be used to form the mesh 304,similar to the metallic grid 202. For example, the first conductivematerial may comprise copper, a copper alloy, or the like. The firstconductive material may be softer than the surrounding substrate, and somay be susceptible to some dishing during polishing. Accordingly, thewidth of the mesh 304 traces can be kept to a minimum (1-5 um, forexample) to reduce dishing, but may be greater than the metallic grid202 in some cases.

Instead of a dielectric fill between portions of the mesh, the areasbetween portions of the mesh 304 of the multi-metal structure 302 can befilled with a second conductive material. The second conductive materialof the fill 306 can be harder than the first conductive material of themesh 304, to reduce the dishing of the contact area. For example, thesecond conductive material may comprise nickel, a nickel alloy, or thelike. In various implementations, different pairs of metals (such ascopper and tin, for example) can be used to form the mesh 304 and fill306, where the softer of the metals may be used for the mesh 304.Alternately, a third conductive material (or more) can be used to formpart of the mesh 304 and/or portions of the fill 306, as desired forhardness, conductivity, coefficient of thermal expansion (CTE), and thelike. In another case, the second conductive material of the fill 306can be softer (e.g. Cu) than the first conductive material of the mesh304 (e.g. Ni). This can also reduce the dishing of the contact area.

The fill 306 may be formed by removing one or more portions of thesubstrate 104 (which may be oxide) surrounding and/or between theportions of the mesh 304. The second conductive material may bedeposited in the vacated areas where the oxide was removed. In alternateembodiments, not all of the oxide surrounding and/or in between the mesh304 may be removed, and the fill 306 may be formed with other patternsthan those illustrated. In other words, in alternate embodiments, thefill 306 may comprise portions of one or more conductive materials andportions of dielectric.

The use of multiple conductive materials (metals, for example) to formthe multi-metal structure 302 increases the overall performance of thecontact area, by increasing the electrically conductive area of contactand reducing the resistance. Dishing may also be reduced with themulti-metal structure 302 (to about 2-10 nm) as compared to the largeconductive contact pad 102 (>10-60 nm). One of the conductive materialscan be selected to have a lower CTE, as compared to the CTE of the otherconductive material, to allow the first conductive material to expandmore under thermal conditions during bonding.

As discussed further below, the multi-metal structure 302 may be formedon a conductive layer 308, which may be coupled to or continuous withother interconnect structures, wiring features, vias, or the like, toprovide electrical connectivity for a microelectronic device, or thelike, having the multi-metal structure 302. To enhance bonding of themulti-metal structure 302 to another contact area, the fill 306comprising the second conductive material (or another conductivematerial) can be flashed (as shown at 310) with the first conductivematerial (copper, for instance), or the like. This allows the diffusionbonding based on a lower annealing temperature for the first conductivematerial to be operative on both portions of the multi-metal structure302.

Three example embodiments of a multi-metal structure 302 are illustratedat FIG. 4. The example embodiments include two or more differentconductive materials to reduce dishing and improve conductivity of thecontact area. In alternate embodiments, a multi-metal structure 302 canhave various other shapes, patterns, quantities of different materials,and so forth, and remain within the scope of the disclosure.

The multi-metal structure 302 at FIG. 4(A) represents a first embodimenthaving the rectangular grid pattern as discussed above, with referenceto FIG. 3(B). At FIG. 4(B), a second embodiment is illustrated with anoverall elliptical shape. The multi-metal structure 302 includesalternating rings of alternating conductive materials, representing themesh 304 and fill 306 portions. The negative effects of sharp corners onthe multi-metal structure 302 may be avoided using an ellipticalcross-sectional shape. The positive aspects of reduced dishing andimproved conductivity due to increased conductive contact area may bepresent with the embodiment in addition to the reduction in adverseeffects on electrical performance due to elimination of sharp corners.In some embodiments (not shown), a mesh 304 (and associated fill 306)with polygonal patterns or other patterns can be formed within theoverall elliptical shape of FIG. 4(B).

At FIG. 4(C), a third embodiment is illustrated with an overallelliptical shape as well, with the stated advantages. The multi-metalstructure 302 includes mesh 304 of the first conductive material withinthe surrounding fill 306. In various implementations, the mesh 304 mayhave an elliptical shape (as shown) or they may have polygonal or othershapes and/or sizes. This embodiment also provides reduced dishing andimproved conductivity due to the increased conductive contact area ofthe multi-metal structure 302. The depth of dishing may be altered bychanging the area of one or more of the mesh 304. Of course, it is to beappreciated that mesh 304 and surrounding fill 306 may be of anyformation, size, and/or shape.

FIG. 5 illustrates an example process 500 of forming a contact area ofthe multi-metal structure 302, and bonding two substrates with contactareas comprising the multi-metal structure 302, according to anembodiment. At (A), a first conductive material (copper, for example)may be formed in a desired pattern (such as a mesh 304, for example) ona surface of the substrate 104. The pattern of the first conductivematerial may be formed by removing a portion of the substrate 104 (byetching, for example), and depositing the first conductive material inthe vacancies created (via a damascene process, or other deposition). Ifthe substrate 104 comprises silicon oxide, for example, adhesion layerscomprising titanium, tantalum, chromium, or the like, may be depositedbefore depositing the first conductive material. The first conductivematerial may be conductively coupled to the conductive layer 308, whichmay comprise copper, aluminum, or the like, and may be continuous withother contact areas of the device. In one embodiment, nickel, a nickelalloy, or other conductive material may be used in place of copper asthe first conductive material.

At (B), remaining portions of the substrate 104 surface around theconductive pattern (e.g., mesh 304) may be removed. Alternately, some ofthe dielectric material of the substrate 104 surface may be allowed toremain, to form a desired pattern. At (C), the second conductivematerial (nickel, for example) may be deposited in the vacancies of thesubstrate 104 surface, forming the fill 306. Alternately, a third (ormore) conductive material may be deposited to form the mesh 304 or thefill 306. The combination of the mesh 304 and the fill 306 forms themulti-metal structure 302, which includes an electrical contactstructure comprising a pattern of vertical layers of two or moreconductive materials, extending normal to the plane of the substrate104, as shown.

At (D), the surface of the device (substrate 104 and multi-metalstructure 302) may be polished, using a CMP process, or the like. As aresult of the polishing, some dishing may occur on the exposed surfaceof the conductive materials (minimal dishing, 2-10 nm, due to thepattern of the multi-metal structure 302), with a greater dishingoccurring on the mesh 304 than the fill 306, due to the difference inhardness of the materials.

At (E), a flash 310 (via electro-less plating, for example) of the firstconductive material (e.g., copper) may be applied to the exposed surfaceof the fill 306 areas to facilitate bonding. For instance, the flashedmetal allows the fill 306 areas to bond at the same annealingtemperature as the mesh 304 areas. At (F), the device may be bonded toanother device using a ZIBOND® technique, or the like, wherein thedielectric portions of the substrate 104 are bonded to dielectricportions of the other device. In an example, as shown in FIG. 5, theother device may be a device with a multi-metal structure 302.

At (G), the multi-metal structure 302 may be bonded to the othermulti-metal structure 302, using annealing, or the like, such as adirect bond interconnect (DBI) technique, i.e. directly bonding ordiffusion bonding the surfaces of the multi-metal structures 302 withoutan intervening reflowable material, such as solder. For example, the DBItechnique may use predetermined heat to bond the multi-metal structures302. During annealing, the copper flashing on the fill 306 allows thesecond conductive material (e.g., nickel) to bond at the sametemperature as the first conductive material (e.g., copper). Thecoefficient of thermal expansion (CTE) of the nickel (for example) ofthe fill 306 may be less than the CTE of the copper (or tin, forinstance) of the mesh 304, allowing the copper to expand more than thenickel, and to fill the gaps in the metal to metal bond. In someembodiments the flash layer 310 coated over the multi-metal structure302 may be comprised of tin, indium, gallium, gold, or the like, ortheir respective alloys and combinations thereof. In some applications,the melting point of the flash layer 310 may be similar or lower thanthe melting point of the first or second conductive materials of themesh 304 or fill 306 respectively. In some applications, a reflowablemetal like tin may also be used as mesh 304 or fill 306.

FIG. 6 illustrates another example process 600 of forming a contact areaof the multi-metal structure 302, and bonding two substrates withcontact areas of the multi-metal structure 302, according to anembodiment. At (A), a conductive layer 308 may be formed within adielectric (or the like) substrate 104. At (B), a portion of the oxidesubstrate may be removed to reveal the conductive layer 308. At (C),resist 602 may be applied to the conductive layer 308, developed andpatterned. The first conductive metal (e.g., copper) may be deposited incavities formed by the resist 602, the cavities forming a preselectedpattern (such as mesh 304, for example) on a surface of the conductivelayer 308. The first conductive material may be conductively coupled tothe conductive layer 308, which may comprise copper, aluminum, or thelike, and may be continuous with other contact areas of the device. Themesh 304 extends from the conductive layer 308 normal to the plane ofthe substrate 104.

At (D), the process includes removing the resist 602, and depositing thesecond conductive material. The second conductive material (nickel, forexample) may be deposited in the vacancies of the removed resist 602,forming the fill 306. This may be followed by polishing (by CMP, forexample) which can result in some minimal dishing of the first andsecond conductive materials. Alternately, a third (or more) conductivematerial may be deposited to form the mesh 304 or the fill 306. Thecombination of the mesh 304 and the fill 306 forms the multi-metalstructure 302, which includes an electrical contact area comprising apattern of vertical layers of two or more conductive materials,extending normal to the plane of the substrate 104, as shown. Still inother embodiments, after forming the conductive layer 304 by thru-maskplating methods, the resist layer 602 may be stripped to expose the topsurface of conductive layer 308; a new patterned resist (not shown) maybe formed over the conductive layer 308 to selectively form the secondconductor fill 306. The second resist may be stripped and a planarizingor non-planarizing layer may be coated over the plated structures mesh304 and fill 306 prior to a CMP operation.

At (E), CMP may be performed on the multi-metal structure 302 and aflash 310 (via electro-less plating, for example) of the firstconductive material (e.g., copper) may be applied to the exposed surfaceof the fill 306 areas to facilitate bonding. For instance, the flashedmetal allows the fill 306 areas to bond at the same annealingtemperature as the mesh 304 areas. At (F), the device may be bonded toanother device using a ZIBOND® technique, or the like, wherein thedielectric portions of the substrate 104 are bonded to dielectricportions of the other device. In an example, as shown in FIG. 6F, theother device may be a device with a multi-metal structure 302.

At (G), the multi-metal structure 302 may be bonded to the othermulti-metal structure 302, using annealing, or the like, such as adirect bond interconnect (DBI) technique, i.e. directly bonding thesurfaces of the multi-metal structures 302 without an interveningreflowable material, such as solder. For example, the DBI technique mayuse pressure and/or heat to bond the multi-metal structures 302. Duringannealing, the copper flashing 310 on the fill 306 allows the secondconductive material (e.g., nickel) to bond at the same temperature asthe first conductive material (e.g., copper). The coefficient of thermalexpansion (CTE) of the nickel of the fill 306 may be less than the CTEof the copper (or tin, for instance) of the mesh 304, allowing thecopper to expand more than the nickel, and filling the gaps in the metalto metal bond. In some embodiments the flash layer 310 coated over themulti-metal structure 302 may be comprised of tin, indium, gallium, goldor their respective alloys and combinations thereof. In someapplications, the melting point of the flash layer 310 may be similar orlower than the melting point of the first or second conductive materialsof mesh 304 or fill 306 respectively. In some applications, a reflowablemetal like tin may also be used as mesh 304 or fill 306.

FIG. 7 illustrates another examples process 700 of forming and bondingtwo substrates 104 with multi-metal contact areas, according to anembodiment. In one embodiment, the process 700 may relate to forming amulti-metal contact structure 302, or the like. At (A), a barrier layer702 may be applied over the substrate 104 comprising one or morecavities (such as damascene cavities). Additionally, a seed layer 701may be applied on the surface of the barrier 702. At (B), a first resistlayer 704 (which may be patterned) may be formed over portions of theseed layer 701.

At (C), the mesh 304 (for example a conductive layer, such as copper)may be deposited over portions of the seed layer 701 not protected bythe resist layer 704. In one embodiment, the mesh 304 may be depositedusing thru-mask plating, electrolytic, electroless, or another knownmethod. At (D), the first resist layer 704 may be removed from thesurface of the seed layer 701.

At (E), a second resist layer 706 (which may be patterned) may be formedover mesh 304. At (F), fill 306 may be selectively formed on the exposedseed layer 701 and sidewalls of the mesh 304. At (G), the mesh 304 andfill 306 are planarized (for example, by using CMP methods).

In one embodiment, a planarized substrate 104 may be prepared and bondedto another substrate. Additionally, a layer (which may be very thin) ofa third (or more) conductive material (for example, a metal such ascopper, copper alloy, etc.) may be selectively coated over the mesh 304and fill 306.

In one example, the third conductive material (not shown) may be thesame material as the mesh 304. In another embodiment, the thirdconductive material may be dissimilar from the mesh 304 and the fill306. For example, the third conductive material may comprise silver,tin, indium, gallium, and/or a combination of the foregoing materials.In one embodiment, a melting point of the third conductive material maybe similar or lower than the melting point of the mesh 304 or fill 306.Additionally, the melting of the third conductive material may be lowerthan a melting point of one or more conductive materials beneath mesh304 and/or fill 306.

In one embodiment, a multi-metal structure 302 may be bonded to anothermulti-metal structure 302 (or any number of multi metal structures 302),using annealing, or the like (such as a direct bond interconnect (DBI)technique). In this manner, the surfaces of the multi-metal structures302 may be directly bonded without an intervening adhesive layer.

As an example, the DBI technique may use a predetermined heat to bondsuch multi-metal structures 302. During annealing, a third layerflashing (not shown) on the mesh 304 and/or fill 306 may allow for anadditional conductive material (e.g., nickel) to bond at the sametemperature as either of the mesh 304 or fill 306. In such anembodiment, the coefficient of thermal expansion (CTE) of nickel (forexample of potentially fill 306) may be less than the CTE of the copperor tin (for example of potentially mesh 304), thereby allowing thecopper to expand more than the nickel, and filling the gaps in the metalto metal bond. In some embodiments, the third conductive material may bedistinguishable from the material used for the mesh 304 and/or fill 306in the bonded structures or substrates.

Conclusion

Although the implementations of the disclosure have been described inlanguage specific to structural features and/or methodological acts, itis to be understood that the implementations are not necessarily limitedto the specific features or acts described. Rather, the specificfeatures and acts are disclosed as representative forms of implementingexample devices and techniques.

Each claim of this document constitutes a separate embodiment, andembodiments that combine different claims and/or different embodimentsare within the scope of the disclosure and will be apparent to those ofordinary skill in the art upon reviewing this disclosure.

The invention claimed is:
 1. A microelectronic component comprising oneor more semiconductor devices, the microelectronic component comprising:a substrate including a recess or opening extending from a first surfaceof the substrate, at least a portion of the first surface of thesubstrate having a planarized topography; a first conductive materialhaving a first melting point, disposed within the recess or opening andforming a first portion of an interconnect structure of themicroelectronic component; and a second conductive material having asecond melting point different from the first melting point, disposedwithin the recess or opening and at least partially surrounded by oradjacent to the first conductive material, the second conductivematerial forming a second portion of the interconnect structure of themicroelectronic component, the second portion of the interconnectstructure extending normal to the plane of the substrate; and a barrierlayer between the substrate and the first conductive material.
 2. Themicroelectronic component of claim 1, further comprising a layer of thefirst conductive material disposed over an exposed surface of the secondportion of the interconnect structure.
 3. The microelectronic componentof claim 1, further comprising a layer of a third conductive material,different from the first and second conductive materials, disposed overan exposed surface of the first and second portions of the interconnectstructure.
 4. The microelectronic component of claim 1, furthercomprising one or more additional conductive materials having one ormore additional melting points different from the first melting pointand the second melting point, disposed within the recess or opening andforming one or more additional portions of the interconnect structure ofthe microelectronic component.
 5. The microelectronic component of claim1, wherein the second melting point of the second conductive material isgreater than the first melting point of the first conductive material.6. The microelectronic component of claim 1, wherein an exposed surfaceof the second portion of the interconnect structure protrudes above anexposed surface of the first portion of the interconnect structure andis level with or recessed below the first surface of the substrate. 7.The microelectronic component of claim 1, wherein a coefficient ofthermal expansion (CTE) of the first conductive material is differentfrom a CTE of the second conductive material.
 8. The microelectroniccomponent of claim 1, wherein the first portion of the interconnectstructure and the second portion of the interconnect structure areadjacent vertical layers, extending normal to a plane of the conductivelayer.
 9. The microelectronic component of claim 8, wherein the adjacentvertical layers include an adhesion layer comprising at least one oftitanium, tantalum, or chromium.
 10. The microelectronic component ofclaim 1, wherein the microelectronic component is a firstmicroelectronic component and the interconnect structure is a firstinterconnect structure, and further comprising a second microelectroniccomponent, wherein a second interconnect structure of the secondmicroelectronic component is bonded to the first interconnect structureby at least one of a direct bond of an insulator material to anotherinsulator material without an adhesive or by a metal to metal diffusionbond, wherein the first interconnect structure and the secondinterconnect structure comprise one of an electrical contact pad or avia.
 11. A microelectronic assembly, comprising: a first microelectroniccomponent comprising: a substrate including a recess or openingextending from a first surface of the substrate, at least a portion ofthe first surface of the substrate having a planarized topography; afirst conductive material having a first melting point, disposed withinthe recess or opening and forming a first portion of an interconnectstructure of the microelectronic component, the first portion of theinterconnect structure extending normal to a plane of the substrate; anda second conductive material having a second melting point differentfrom the first melting point, disposed within the recess or opening andforming a second portion of the interconnect structure of themicroelectronic component, the second portion of the interconnectstructure extending normal to the plane of the substrate and at leastpartially surrounded by or adjacent to the first conductive material; abarrier layer between the substrate and the first conductive material;and a second microelectronic component having a second interconnectstructure bonded to the first interconnect structure by at least one ofa direct bond of an insulator material to another insulator material,without an adhesive or by a metal to metal diffusion bond, wherein thefirst interconnect structure and the second interconnect structurecomprise one of an electrical contact pad or a via.
 12. Themicroelectronic assembly of claim 11, wherein the first interconnectstructure comprises one or more additional conductive materials havingone or more additional melting points different from the first meltingpoint and the second melting point, disposed within the recess oropening of the substrate of the first microelectronic component andforming one or more additional portions of the first interconnectstructure of the first microelectronic component.
 13. Themicroelectronic assembly of claim 11, wherein the second microelectroniccomponent comprises: a substrate including a recess or opening extendingfrom a first surface of the substrate of the second microelectroniccomponent, at least a portion of the first surface of the substrate ofthe second microelectronic component having a planarized topography; afirst conductive material having a third melting point, disposed withinthe recess or opening of the substrate of the second microelectroniccomponent and forming a first portion of the second interconnectstructure, the first portion of the second interconnect structureextending normal to a plane of the substrate of the secondmicroelectronic component; a second conductive material having a fourthmelting point different from the third melting point, disposed withinthe recess or opening of the substrate of the second microelectroniccomponent and contacting the first portion of the second interconnectstructure and forming a second portion of the second interconnectstructure, the second portion of the second interconnect structureextending normal to the plane of the substrate of the secondmicroelectronic component.
 14. The microelectronic assembly of claim 13,wherein second interconnect structure comprises one or more additionalconductive materials having one or more additional melting pointsdifferent from the third melting point and the fourth melting point,disposed within the recess or opening of the substrate of the secondmicroelectronic component and forming one or more additional portions ofthe second interconnect structure of the second microelectroniccomponent.
 15. A microelectronic component comprising one or moresemiconductor devices, the microelectronic component comprising: asubstrate including a recess or opening extending from a first surfaceof the substrate, at least a portion of the first surface of thesubstrate having a planarized topography; a first conductive materialhaving a first coefficient of thermal expansion (CTE), disposed withinthe recess or opening and forming a first portion of an interconnectstructure of the microelectronic component, the first portion of theinterconnect structure extending normal to a plane of the substrate; asecond conductive material having a second CTE different from the firstCTE, disposed within the recess or opening and at least partiallysurrounded by or adjacent to the first conductive material, the secondconductive material forming a second portion of the interconnectstructure of the microelectronic component, the second portion of theinterconnect structure extending normal to the plane of the substrate;and a barrier layer between the substrate and the first conductivematerial.
 16. The microelectronic component of claim 15, furthercomprising one or more additional conductive materials having one ormore additional coefficients of thermal expansion different from thefirst CTE and the second CTE, disposed within the recess or opening andforming one or more additional portions of the interconnect structure ofthe microelectronic component.
 17. The microelectronic component ofclaim 15, wherein the microelectronic component is a firstmicroelectronic component and the interconnect structure is a firstinterconnect structure, and further comprising a second microelectroniccomponent, wherein a second interconnect structure of the secondmicroelectronic component is bonded to the first interconnect structureby at least one of a direct bond of an insulator material to anotherinsulator material, without an adhesive or by a metal to metal diffusionbond, wherein the first interconnect structure and the secondinterconnect structure comprise one of an electrical contact pad or avia in pad.
 18. The microelectronic component of claim 15, wherein amelting point of the first conductive material is greater than a meltingpoint of the second conductive material.
 19. A microelectronic assembly,comprising: a first microelectronic component comprising: a substrateincluding a recess or opening extending from a first surface of thesubstrate, at least a portion of the first surface of the substratehaving a planarized topography; a first conductive material having afirst coefficient of thermal expansion (CTE), disposed within the recessor opening and forming a first portion of an interconnect structure ofthe microelectronic component; a second conductive material having asecond CTE different from the first CTE, disposed within the recess oropening and forming a second portion of the interconnect structure ofthe microelectronic component; a barrier layer between the substrate andthe first conductive material; and a second microelectronic componenthaving a second interconnect structure bonded to the first interconnectstructure by at least one of a direct bond of an insulator material toanother insulator material without an adhesive or by a metal to metaldiffusion bond, wherein the first interconnect structure and the secondinterconnect structure comprise one of an electrical contact pad or avia.
 20. The microelectronic assembly of claim 19, wherein the secondmicroelectronic component comprises: a substrate including a recess oropening extending from a first surface of the substrate of the secondmicroelectronic component, at least a portion of the first surface ofthe substrate of the second microelectronic component having aplanarized topography; a first conductive material having a third CTE,disposed within the recess or opening of the substrate of the secondmicroelectronic component and forming a first portion of the secondinterconnect structure; a second conductive material having a fourth CTEdifferent from the third CTE, disposed within the recess or opening ofthe substrate of the second microelectronic component and contacting thefirst portion of the second interconnect structure and forming a secondportion of the second interconnect structure.
 21. The microelectronicassembly of claim 20, wherein second interconnect structure comprisesone or more additional conductive materials having one or moreadditional coefficients of thermal expansion different from the thirdCTE and the fourth CTE, disposed within the recess or opening of thesubstrate of the second microelectronic component and forming one ormore additional portions of the second interconnect structure of thesecond microelectronic component.